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  4. Oxide substrate for thin film growth YSZ (Shinkosha Co., Ltd.)

Oxide substrate for thin film growth YSZ
Shinkosha Co., Ltd.

About This Product

■Since the 1980s, our company has continued to contribute to the advancement of science and technology, including providing SrTiO3 and sapphire substrates as substrates for high-temperature superconducting thin films and GaN.

For epitaxial growth substrates, the presence or absence of crystal lattice distortion on the outermost surface is important, as well as crystallinity, smoothness and flatness of the substrate surface. Based on our accumulated technology over many years, we carry out integrated production in-house, from crystal growth (with the exception of some crystals) to processing.Using high-precision processing technology, we can finish the surface of a high-quality crystal substrate without any processed distortion layers. I am. We provide oxide crystal substrates that are ideal for epitaxial growth of dielectrics, superconductors, compound semiconductors, etc.

■Physical properties

・Composition Y2O3 (10 mol%) -ZrO2 (90 mol%) ・Crystal system cubic crystal ・Crystal structure CaF2 type ・Lattice constant a=0.5139 nm ・Melting point 2,500℃ ・Density 6.05 g/cm3 (20 ℃) ・Dielectric constant 27 ・Thermal expansion coefficient 10.3×10^-6/℃

■Options

・OFF board ・Break grooved board

  • Product

    Oxide substrate for thin film growth YSZ

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1 Models of Oxide substrate for thin film growth YSZ

Image Part Number Price (excluding tax) Surface orientation (tolerance: ±0.5°) Surface roughness Surface treatment Polishing Orifla

YZｰASｰ10N

Available upon quote

-100

Ra≦1.0 nm
Rmax≦5.0 nm

Standard

Single side polishing

-10

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About Company Handling This Product

Shinkosha Co., Ltd.

  • Japan

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