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Oxide substrate for thin film growth LSAT-LSATーASー10N
Oxide substrate for thin film growth LSAT-Shinkosha Co., Ltd.

Oxide substrate for thin film growth LSAT
Shinkosha Co., Ltd.

Shinkosha Co., Ltd.'s Response Status

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100.0%

Response Time

30.1hours

Relatively Fast Response


About This Product

■Since the 1980s, our company has continued to contribute to the advancement of science and technology, including providing SrTiO3 and sapphire substrates as substrates for high-temperature superconducting thin films and GaN.

For epitaxial growth substrates, the presence or absence of crystal lattice distortion on the outermost surface is important, as well as crystallinity, smoothness and flatness of the substrate surface. Based on our accumulated technology over many years, we carry out integrated production in-house, from crystal growth (with the exception of some crystals) to processing.Using high-precision processing technology, we can finish the surface of a high-quality crystal substrate without any processed distortion layers. I am. We provide oxide crystal substrates that are ideal for epitaxial growth of dielectrics, superconductors, compound semiconductors, etc.

■LSAT

LSAT has a 1/2 lattice constant of 0.3868 nm, which matches well with high-temperature superconductors and other high-performance oxides. Unlike LaAlO3, LSAT does not contain twins and can be grown using the CZ method, so it is larger than SrTiO3. Good crystallinity can be obtained. Please feel free to use it for your research.

■Physical properties

・Composition (LaAlO3) 0.3- (SrAl0.5Ta0.5O3) 0.7 ・Crystal system cubic crystal ・Crystal structure Perovskite structure ・Lattice constant a=0.7736 nm (a/2=0.3868 nm) ・Melting point 1,840℃ ・Density 6.79 g/cm3 (20 ℃) ・Dielectric constant 22 (27℃, 1MHz)

■Options

・OFF board ・Break grooved board

  • Product

    Oxide substrate for thin film growth LSAT

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1 Models of Oxide substrate for thin film growth LSAT

Image Part Number Price (excluding tax) Surface orientation (tolerance: ±0.5°) Surface roughness Surface treatment Polishing Orifla
Oxide substrate for thin film growth LSAT-Part Number-LSATーASー10N

LSATーASー10N

Available upon quote

-100

Ra≦1.0 nm
Rmax≦5.0 nm

Standard

Single side polishing

-10

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About Company Handling This Product

Response Rate

100.0%


Response Time

30.1hrs

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