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  4. Oxide substrate for thin film growth Lanthanum aluminate (Shinkosha Co., Ltd.)
Oxide substrate for thin film growth Lanthanum aluminate-LAｰASｰ10S
Oxide substrate for thin film growth Lanthanum aluminate-Shinkosha Co., Ltd.

Oxide substrate for thin film growth Lanthanum aluminate
Shinkosha Co., Ltd.

Shinkosha Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

30.1hours

Relatively Fast Response

About This Product

■Since the 1980s, our company has continued to contribute to the advancement of science and technology, including providing SrTiO3 and sapphire substrates as substrates for high-temperature superconducting thin films and GaN.

For epitaxial growth substrates, the presence or absence of crystal lattice distortion on the outermost surface is important, as well as crystallinity, smoothness and flatness of the substrate surface. Based on our accumulated technology over many years, we carry out integrated production in-house, from crystal growth (with the exception of some crystals) to processing.Using high-precision processing technology, we can finish the surface of a high-quality crystal substrate without any processed distortion layers. I am. We provide oxide crystal substrates that are ideal for epitaxial growth of dielectrics, superconductors, compound semiconductors, etc.

■Lantern aluminate

We provide integrated production from crystal growth using the CZ method to substrate processing. Please make use of the lanthanum aluminate substrates that are ideal for various epitaxial growths in your research.

■Physical properties

・Composition LaAlO3 ・Crystal system Trigonal (pseudocubic) *LaAlO3 is technically trigonal (a=0.5357 nm, α=60.1°), but it is generally treated as pseudocubic or hexagonal. ・Crystal structure: pseudo-perovskite structure ・Lattice constant a=0.379 nm (pseudo cubic system display) ・Melting point 2,100℃ ・Cultivation method: CZ method ・Density 6.52 g/cm3 (20 ℃) ・Dielectric constant 15~22 (300 K, 1MHz) ・Thermal expansion coefficient 12.6×10^-6/℃ ・Phase transition temperature 420℃ (trigonal ⇔ cubic) ・Twinning Occurs due to phase transition

■Options

・STEP board ・OFF board ・Break grooved board

  • Product

    Oxide substrate for thin film growth Lanthanum aluminate

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1 Models of Oxide substrate for thin film growth Lanthanum aluminate

Image Part Number Price (excluding tax) Surface orientation (tolerance: ±0.5°) Surface roughness Surface treatment Polishing Flatness (λ=632.8 nm) Size Orifla
Oxide substrate for thin film growth Lanthanum aluminate-Part Number-LAｰASｰ10S

LAｰASｰ10S

Available upon quote

(100) *Pseudocubic system display

Ra≦1.0 nm
Rmax≦5.0 nm

STEP

Single side polishing

≦λ

External shape tolerance ±0.1mm Thickness tolerance ±0.05mm: 10×10×0.5t

-10

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About Company Handling This Product

Shinkosha Co., Ltd.

Response Rate

100.0%

Response Time

30.1hrs

  • Japan

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