Oxide substrate for thin film growth neodygallate-NGOｰASｰ10N

Oxide substrate for thin film growth neodygallate
Shinkosha Co., Ltd.

About This Product

■Since the 1980s, our company has continued to contribute to the advancement of science and technology, including providing SrTiO3 and sapphire substrates as substrates for high-temperature superconducting thin films and GaN.For epitaxial growth substrates, the presence or absence of crystal lattice distortion on the outermost surface is important, as well as crystallinity, smoothness and flatness of the substrate surface. Based on our accumulated technology over many years, we carry out integrated production in-house, from crystal growth (with the exception of some crystals) to processing.Using high-precision processing technology, we can finish the surface of a high-quality crystal substrate without any processed distortion layers. I am.

We provide oxide crystal substrates that are ideal for epitaxial growth of dielectrics, superconductors, compound semiconductors, etc.

■NeodygalateNaGaO3 (110) is widely used as a substrate for epitaxial growth of magnetic materials, ferroelectric materials, and superconductors. The (011) plane is also attracting attention as an epitaxial substrate for GaN because its lattice length and symmetry are close to those of GaN (0001). Our company performs integrated production from crystal growth using the CZ method to substrate processing. Please feel free to use it for your research.

■Physical properties・Composition NdGaO3
・Crystal system Rectangular (orthorhombic) system
・Crystal structure Perovskite structure
・Lattice constant a=0.5431 nm b=0.5499 nm c=0.7710 nm
・Melting point 1,650℃
・Density 7.56 g/cm3
・Cultivation method: CZ method
・Dielectric constant 20~25 (27℃, 1MHz)
・Thermal expansion coefficient 10×10^-6/℃

■Options・OFF board
・Break grooved board

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Product
Oxide substrate for thin film growth neodygallate

Handling Company
Shinkosha Co., Ltd.

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Semiconductor Manufacturing

Semiconductor Materials

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1 Models of Oxide substrate for thin film growth neodygallate

Image	Part Number	Price (excluding tax)	Surface orientation (tolerance: ±0.5°)	Surface roughness	Surface treatment	Polishing	Flatness (λ=632.8 nm)	Size	Orifla
	NGOｰASｰ10N	Available upon quote	-100	Ra≦1.0 nm Rmax≦5.0 nm	Standard	Single side polishing	≦λ	External shape tolerance ±0.1mm Thickness tolerance ±0.05mm: 10×10×0.5t	-1

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About Company Handling This Product

Shinkosha Co., Ltd.

Japan

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Oxide substrate for thin film growth neodygallate Shinkosha Co., Ltd.

About This Product

■Since the 1980s, our company has continued to contribute to the advancement of science and technology, including providing SrTiO3 and sapphire substrates as substrates for high-temperature superconducting thin films and GaN.

■Neodygalate

■Physical properties

■Options

1 Models of Oxide substrate for thin film growth neodygallate

NGOｰASｰ10N

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Other products of Shinkosha Co., Ltd.

About Company Handling This Product

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Oxide substrate for thin film growth neodygallate
Shinkosha Co., Ltd.