Oxide substrate for thin film growth Sapphire-AO-CS-D10N

Oxide substrate for thin film growth Sapphire
Shinkosha Co., Ltd.

About This Product

■Since the 1980s, our company has continued to contribute to the advancement of science and technology, including providing SrTiO3 and sapphire substrates as substrates for high-temperature superconducting thin films and GaN.For epitaxial growth substrates, the presence or absence of crystal lattice distortion on the outermost surface is important, as well as crystallinity, smoothness and flatness of the substrate surface. Based on our accumulated technology over many years, we carry out integrated production in-house, from crystal growth (with the exception of some crystals) to processing.Using high-precision processing technology, we can finish the surface of a high-quality crystal substrate without any processed distortion layers. I am.

We provide oxide crystal substrates that are ideal for epitaxial growth of dielectrics, superconductors, compound semiconductors, etc.

■SapphireWe provide sapphire substrates that are ideal for epitaxial growth, including Group III nitride semiconductor thin films, superconducting thin films, and dielectric thin films. Using our original TSMG method, we carry out integrated production in-house from crystal growth to processing. We have received high praise from many customers both domestically and internationally for our sapphire crystal quality, substrate surface processing quality, and high level of cleaning and packaging.

■Physical properties・Composition Al2O3
・Crystal system Trigonal system (rhombohedral system)
・Crystal structure Corundum type structure
・Lattice constant (nm) a=0.47588, c=1.2992 (hexagonal system display * Sapphire is technically a trigonal system (a=0.513 nm, α=55.1°), but it is generally treated as a hexagonal system. )
・Melting point (℃) 2,040
・Density (g/cm3) 3.987
・Cultivation method: TSMG method
・Dielectric constant (//c axis) 9.41 at 30 GHz
・Dielectric loss (//c axis) 3×10^-5 at 30 GHz
・Linear expansion coefficient (10^-6/℃) a-axis 6.93, c-axis 7.63 at 200 ℃ a-axis 8.89, c-axis 9.97 at 1,000 ℃

■Options・STEP board
・OFF board
・Break grooved board

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There are 1 models for this product.

Product
Oxide substrate for thin film growth Sapphire

Handling Company
Shinkosha Co., Ltd.

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Semiconductor Manufacturing

Semiconductor Materials

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1 Models of Oxide substrate for thin film growth Sapphire

Image	Part Number	Price (excluding tax)	Surface treatment	Purity (%)	Polishing	Packing	Flatness (μm)	Thickness (mm) (tolerance ±0.05)	Size (mm) (tolerance)
	AO-CS-D10N	Available upon quote	Standard	>99.99	One side	10 pieces	<1	0.5	10×10 (±0.1)

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About Company Handling This Product

Shinkosha Co., Ltd.

Japan

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Oxide substrate for thin film growth Sapphire Shinkosha Co., Ltd.

About This Product

■Since the 1980s, our company has continued to contribute to the advancement of science and technology, including providing SrTiO3 and sapphire substrates as substrates for high-temperature superconducting thin films and GaN.

■Sapphire

■Physical properties

■Options

1 Models of Oxide substrate for thin film growth Sapphire

AO-CS-D10N

Customers who viewed this product also viewed

Other products of Shinkosha Co., Ltd.

About Company Handling This Product

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Oxide substrate for thin film growth Sapphire
Shinkosha Co., Ltd.