Oxide substrate for thin film growth Titanium oxide (rutile)-TOｰASｰ10N

Oxide substrate for thin film growth Titanium oxide (rutile)
Shinkosha Co., Ltd.

About This Product

■Since the 1980s, our company has continued to contribute to the advancement of science and technology, including providing SrTiO3 and sapphire substrates as substrates for high-temperature superconducting thin films and GaN.For epitaxial growth substrates, the presence or absence of crystal lattice distortion on the outermost surface is important, as well as crystallinity, smoothness and flatness of the substrate surface. Based on our accumulated technology over many years, we carry out integrated production in-house, from crystal growth (with the exception of some crystals) to processing.Using high-precision processing technology, we can finish the surface of a high-quality crystal substrate without any processed distortion layers. I am.

We provide oxide crystal substrates that are ideal for epitaxial growth of dielectrics, superconductors, compound semiconductors, etc.

■Titanium oxide (rutile)In addition to being used as an optical material that uses birefringence, rutile is also attracting attention as a substrate for epitaxial growth. Our company performs integrated production from crystal growth using the Bernoulli method to substrate processing. As a rutile crystal, it boasts the world's top level in terms of size, quality, and production volume. We also offer Nb:TiO2 substrates doped with Nb to make them conductive, and STEP substrates that are atomically flat. Please make use of our rutile substrates, which are ideal for various epitaxial growth, in your research.

■Physical properties・Composition TiO2
・Crystal system: Tetragonal
・Crystal structure: Rutile type
・Lattice constant a=0.45935 nm c=0.29580 nm
・Melting point 1,840℃
・Creating method: Bernoulli method
・Density 4.252 g/cm3 (20 ℃)
・Dielectric constant 113 (1 MHz)
・Thermal expansion coefficient (30 to 400℃) (A-axis direction) 7.81×10^-6/℃ (C-axis direction) 10.1×10^-6/℃
・Band gap 3.0 eV
・Refractive index (at 706.5 nm) no=2.5490 ne=2.8226

■Options・STEP board
・OFF board
・Break grooved board

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There are 1 models for this product.

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Oxide substrate for thin film growth Titanium oxide (rutile)

Handling Company
Shinkosha Co., Ltd.

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Semiconductor Manufacturing

Semiconductor Materials

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Last viewed: 6 hours ago

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1 Models of Oxide substrate for thin film growth Titanium oxide (rutile)

Image	Part Number	Price (excluding tax)	Surface orientation (tolerance: ±0.5°)	Surface roughness	Surface treatment	Purity	Polishing	Resistivity (Ω・cm)	Flatness (λ=632.8 nm)	Dope	Size	Orifla
	TOｰASｰ10N	Available upon quote	-100	Ra≦1.0nm Rmax≦5.0nm	Standard	>99.98%	One side	>10^7	≦λ	Non	External shape tolerance ±0.1mm, thickness tolerance ±0.05mm: 10×10×0.5t	-1

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About Company Handling This Product

Shinkosha Co., Ltd.

Japan

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Oxide substrate for thin film growth Titanium oxide (rutile) Shinkosha Co., Ltd.

About This Product

■Since the 1980s, our company has continued to contribute to the advancement of science and technology, including providing SrTiO3 and sapphire substrates as substrates for high-temperature superconducting thin films and GaN.

■Titanium oxide (rutile)

■Physical properties

■Options

1 Models of Oxide substrate for thin film growth Titanium oxide (rutile)

TOｰASｰ10N

Customers who viewed this product also viewed

Other products of Shinkosha Co., Ltd.

About Company Handling This Product

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Oxide substrate for thin film growth Titanium oxide (rutile)
Shinkosha Co., Ltd.