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  4. Oxide substrate for thin film growth Strontium titanate (Shinkosha Co., Ltd.)
Oxide substrate for thin film growth Strontium titanate-STｰASｰ10S
Oxide substrate for thin film growth Strontium titanate-Shinkosha Co., Ltd.

Oxide substrate for thin film growth Strontium titanate
Shinkosha Co., Ltd.

About This Product

■Since the 1980s, our company has continued to contribute to the advancement of science and technology, including providing SrTiO3 and sapphire substrates as substrates for high-temperature superconducting thin films and GaN.

For epitaxial growth substrates, the presence or absence of crystal lattice distortion on the outermost surface is important, as well as crystallinity, smoothness and flatness of the substrate surface. Based on our accumulated technology over many years, we carry out integrated production in-house, from crystal growth (with the exception of some crystals) to processing.Using high-precision processing technology, we can finish the surface of a high-quality crystal substrate without any processed distortion layers. I am. We provide oxide crystal substrates that are ideal for epitaxial growth of dielectrics, superconductors, compound semiconductors, etc.

■Strontium titanate

SrTiO3 has a typical perovskite structure and is widely used as a substrate for ferroelectric and superconductor thin films. Our company performs integrated production from crystal growth using the Bernoulli method to substrate processing, and boasts world-class quality and production volume. We also offer Nb:SrTiO3 substrates doped with Nb to make them conductive, and STEP substrates that are flat at the atomic level. Please use it for your research.

■Physical properties

・Composition SrTiO3 ・Crystal system cubic crystal ・Space group Pm3m (Perovskite) ・Lattice constant a=0.3905 nm ・Melting point 2,080℃ ・Creating method: Bernoulli method ・Density 5.122 g/cm3 (20 ℃) ・Dielectric constant 310 (27℃, 1MHz) ・Thermal expansion coefficient 11.1×10^-6/℃ (room temperature to 1,000℃) ・Phase transition temperature 110 K (tetragonal ⇔ cubic) ・Refractive index 2.407 (at 589 nm)

■Options

・STEP board ・OFF board ・Break grooved board

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    Oxide substrate for thin film growth Strontium titanate

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1 Models of Oxide substrate for thin film growth Strontium titanate

Image Part Number Price (excluding tax) Surface orientation (tolerance: ±0.5°) Surface roughness Surface treatment Purity Polishing Resistivity (Ω・cm) Flatness (λ=632.8 nm) Dope Size Orifla
Oxide substrate for thin film growth Strontium titanate-Part Number-STｰASｰ10S

STｰASｰ10S

Available upon quote

-100

Ra≦1.0nm
Rmax≦5.0nm

STEP

>99.98%

One side

>10^7

≦λ

Non

External shape tolerance ±0.1mm, thickness tolerance ±0.05mm: 10×10×0.5t

-10

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Shinkosha Co., Ltd.

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