This product is registered by T&M Corporation Co., Ltd..
About This Product
■Summary
・Bandwidth 1GHz
・Common mode voltage 85kVpk
・DC accuracy 1%
・CMRR DC: 180dB 1GHz:108dB
・Differential voltage range 0.1V-5,000V
・Noise <0.45mVrms Rise time ≤350ps
■Present True Signal
The SigOFIT probe has an extremely high common mode rejection ratio (CMRR) of 128dB at 100MHz and over 100dB at 1GHz, allowing you to measure signals with high fidelity.
■Excellent amplitude-frequency characteristics
DC gain accuracy ≤1%, noise ≤0.45mVrms, zero drift <0.1% (after 5 minutes), gain drift <1%.
■Probe most suitable for 3rd generation semiconductors
Devices like SiC and GaN can switch high voltages containing very high-energy, high-frequency harmonics in a matter of nanoseconds. SigOFIT has a CMRR of over 100dB even at maximum bandwidth, suppressing oscillations caused by high frequency common mode noise.
■Wide measurement range
Traditional differential probes can only measure high voltage signals, but by using different attenuator tips, the SigOFIT probe can measure differential mode signals from ±0.1V to ±6250, providing optimal Achieves extremely high S/N ratio on the range.
■Easy to use and flexible
The probe tip is smaller and more accurate than traditional differential probes, allowing testing immediately after power-up. Autozero provides accurate signal output in less than 1 second, real time.
■Safety performance
The SigOFIT probe's test leads are short and the input capacitance is less than 2.5pF due to coaxial cable transmission, making it very safe for testing GaN. *Safety cannot be guaranteed if the device is already in a critical state.
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