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■Summary This SiC bond wafer is made by bonding a SiC (silicon carbide) wafer, which is a high voltage substrate used in automotive power devices, to a silicon substrate or polysilicon carbide substrate to a thickness of 0.3 to 0.5 μm. The wafer is cheaper than SiC wafers and has the same performance as SiC wafers.
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Applicable wafer size
Finishing
Material
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Polyimide
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SiC bond waferProduct
High-performance boardHandling Company
Micro Semiconductor Research Co., Ltd.Categories
| Image | Price (excluding tax) | Applicable wafer size | Finishing | Material | Thickness |
|---|---|---|---|---|---|
| Available upon quote | 100mm | Active layer: polished Support substrate: etching | Active layer: SiC Support substrate: Si or Poly-Sic | Active layer: 0.3~0.5μm Support substrate: 525μm |
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