All Categories
History
Price (excluding tax)
You can search for other models from each index. The displayed value is the value of the currently selected part number.
Buried oxide film Thermal oxide film Buried oxide film
Device Thickness Tolerance Range
Device layer Buried layer implant
Device layer Final field oxide film
Device layer Silicon growth method
Device layer Trench filling-oxide film (both sides)
Device layer Trench filling-polysilicon
Device layer crystal orientation
Device layer dopant type
Device layer doping
Device layer low efficiency
Device layer planarization
Device layer thickness
Device layer trench aspect ratio
Device layer trench lateral diffusion doping
Device layer trench line width
Device layer trench mask tone
Device layer trench mask type
Handle layer back side treatment
Handle layer crystal orientation
Handle layer dopant type
Handle layer doping
Handle layer layer thickness range
Handle layer resistivity
Handle layer silicon growth method
Handle thickness
Handle thickness tolerance range
Part Number
TSOI Wafer Wafer diameter 125mmProduct
TSOI WaferHandling Company
Icemos Technology Japan Co., Ltd.Categories
| Image | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film | Device Thickness Tolerance Range | Device layer Buried layer implant | Device layer Final field oxide film | Device layer Silicon growth method | Device layer Trench filling-oxide film (both sides) | Device layer Trench filling-polysilicon | Device layer crystal orientation | Device layer dopant type | Device layer doping | Device layer low efficiency | Device layer planarization | Device layer thickness | Device layer trench aspect ratio | Device layer trench lateral diffusion doping | Device layer trench line width | Device layer trench mask tone | Device layer trench mask type | Handle layer back side treatment | Handle layer crystal orientation | Handle layer dopant type | Handle layer doping | Handle layer layer thickness range | Handle layer resistivity | Handle layer silicon growth method | Handle thickness | Handle thickness tolerance range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Available upon quote | 0.2-4.0μm by handle, device or both wafers | ±0.5 μm | N type or P type | Thermal oxide film + TEOS up to 1μm | CZ, MCZ or FZ | 0.1-1.0μm | To full (doped or undoped polysilicon) | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | CMP | ≥1.5-100μm | 15:1 | Phosphorus | >2μm | Positive resistance | E-beam master for projection aligner | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 350-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 350-800μm | ±5μm |
Reviews shown here are reviews of companies.
Reviews shown here are reviews of companies.
