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Buried oxide film Thermal oxide film Buried oxide film
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Part Number
TSOI Wafer Wafer diameter 100mmProduct
TSOI WaferHandling Company
Icemos Technology Japan Co., Ltd.Categories
| Image | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film | Device Thickness Tolerance Range | Device layer Buried layer implant | Device layer Final field oxide film | Device layer Silicon growth method | Device layer Trench filling-oxide film (both sides) | Device layer Trench filling-polysilicon | Device layer crystal orientation | Device layer dopant type | Device layer doping | Device layer low efficiency | Device layer planarization | Device layer thickness | Device layer trench aspect ratio | Device layer trench lateral diffusion doping | Device layer trench line width | Device layer trench mask tone | Device layer trench mask type | Handle layer back side treatment | Handle layer crystal orientation | Handle layer dopant type | Handle layer doping | Handle layer layer thickness range | Handle layer resistivity | Handle layer silicon growth method | Handle thickness | Handle thickness tolerance range |
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Available upon quote | 0.2-4.0μm by handle, device or both wafers | ±0.5 μm | N type or P type | Thermal oxide film + TEOS up to 1μm | CZ, MCZ or FZ | 0.1-1.0μm | To full (doped or undoped polysilicon) | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | CMP | ≥1.5-100μm | 15:1 | Phosphorus | >2μm | Positive resistance | E-beam master for projection aligner | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 350-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 350-800μm | ±5μm |
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