All Categories
History
Price (excluding tax)
You can search for other models from each index. The displayed value is the value of the currently selected part number.
Buried oxide film Thermal oxide film Buried oxide film
Device Thickness Tolerance Range
Device layer Buried layer implant
Device layer Cavity creation location
Device layer Silicon growth method
Device layer cavity SPAN (width):thin film (device) thickness ratio
Device layer cavity depth
Device layer crystal orientation
Device layer dopant type
Device layer doping
Device layer low efficiency
Device layer minimum bonding size characteristics
Device layer thickness
Device layer thin film thickness/SOI thickness
Handle layer back side treatment
Handle layer crystal orientation
Handle layer dopant type
Handle layer doping
Handle layer layer thickness range
Handle layer resistivity
Handle layer silicon growth method
Handle thickness
Handle thickness tolerance range
Part Number
CSOI Wafer Wafer diameter 100mmProduct
CSOI WaferHandling Company
Icemos Technology Japan Co., Ltd.Categories
| Image | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film | Device Thickness Tolerance Range | Device layer Buried layer implant | Device layer Cavity creation location | Device layer Silicon growth method | Device layer cavity SPAN (width):thin film (device) thickness ratio | Device layer cavity depth | Device layer crystal orientation | Device layer dopant type | Device layer doping | Device layer low efficiency | Device layer minimum bonding size characteristics | Device layer thickness | Device layer thin film thickness/SOI thickness | Handle layer back side treatment | Handle layer crystal orientation | Handle layer dopant type | Handle layer doping | Handle layer layer thickness range | Handle layer resistivity | Handle layer silicon growth method | Handle thickness | Handle thickness tolerance range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Available upon quote | 0.2-4.0μm by handle, device or both wafers | ±0.5 μm | N type or P type | Handle, device or embedded layer | CZ, MCZ or FZ | <50:1 μm (by design) | 1-30μm @ +/-10%, 31-300μm @+/-20% | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | 20μm | ≥1.5μm | >2μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
Reviews shown here are reviews of companies.
Reviews shown here are reviews of companies.
