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Buried oxide film Thermal oxide film Buried oxide film thickness
Device layer (first film, second film) Silicon growth method
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Part Number
DSOI Wafer Wafer diameter 200mmProduct
DSOI WaferHandling Company
Icemos Technology Japan Co., Ltd.Categories
| Image | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film thickness | Device layer (first film, second film) Silicon growth method | Device layer (first film, second film) crystal orientation | Device layer (first film, second film) dopant type | Device layer (first film, second film) doping | Device layer (first film, second film) film thickness | Device layer (first film, second film) resistivity | Device layer (first film, second film) thickness tolerance range | Handle layer back side treatment | Handle layer crystal orientation | Handle layer dopant type | Handle layer doping | Handle layer layer thickness range | Handle layer resistivity | Handle layer silicon growth method | Handle layer thickness | Handle layer thickness tolerance range |
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Available upon quote | 0.2-4.0μm by handle, device or both wafers | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≥5μm | ≤0.001 - ≥10,000 Ω-cm | ±0.8 μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 450-1,100μm | ±5μm |
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