All Categories
History
Price (excluding tax)
You can search for other models from each index. The displayed value is the value of the currently selected part number.
Buried oxide film Thermal oxide film Buried oxide film thickness
Device layer (first film, second film) Silicon growth method
Device layer (first film, second film) crystal orientation
Device layer (first film, second film) dopant type
Device layer (first film, second film) doping
Device layer (first film, second film) film thickness
Device layer (first film, second film) resistivity
Device layer (first film, second film) thickness tolerance range
Handle layer back side treatment
Handle layer crystal orientation
Handle layer dopant type
Handle layer doping
Handle layer layer thickness range
Handle layer resistivity
Handle layer silicon growth method
Handle layer thickness
Handle layer thickness tolerance range
Part Number
DSOI Wafer Wafer diameter 100mmProduct
DSOI WaferHandling Company
Icemos Technology Japan Co., Ltd.Categories
| Image | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film thickness | Device layer (first film, second film) Silicon growth method | Device layer (first film, second film) crystal orientation | Device layer (first film, second film) dopant type | Device layer (first film, second film) doping | Device layer (first film, second film) film thickness | Device layer (first film, second film) resistivity | Device layer (first film, second film) thickness tolerance range | Handle layer back side treatment | Handle layer crystal orientation | Handle layer dopant type | Handle layer doping | Handle layer layer thickness range | Handle layer resistivity | Handle layer silicon growth method | Handle layer thickness | Handle layer thickness tolerance range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Available upon quote | 0.2-4.0μm by handle, device or both wafers | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≥1.5μm | ≤0.001 - ≥10,000 Ω-cm | ±0.5 μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
Reviews shown here are reviews of companies.
Reviews shown here are reviews of companies.
