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Bow
Crystal orientation
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Doping
Low efficiency
Roughness
Silicon growth method
Thermal oxidation Field oxide film thickness
Thickness deviation (TTV)
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Wafer thickness tolerance range
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Part Number
DSP Wafer Wafer diameter 200mmProduct
DSP WafersHandling Company
Icemos Technology Japan Co., Ltd.Categories
| Image | Price (excluding tax) | Bow | Crystal orientation | Dopant type | Doping | Low efficiency | Roughness | Silicon growth method | Thermal oxidation Field oxide film thickness | Thickness deviation (TTV) | Wafer thickness | Wafer thickness tolerance range | Warp |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Available upon quote | ≤40μm | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | ≤2Å | CZ, MCZ or FZ | 0.2-4.0 μm | ≤2μm | 450-1,100μm | ±5μm | ≤40μm |
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Reviews shown here are reviews of companies.
