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Buried oxide film Thermal oxide film Buried oxide film thickness
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Part Number
SOI Wafer Wafer diameter 200mmProduct
SOI WaferHandling Company
Icemos Technology Japan Co., Ltd.Categories
| Image | Price (excluding tax) | Buried oxide film Thermal oxide film Buried oxide film thickness | Device Thickness Tolerance Range | Device layer Buried layer implant | Device layer Silicon growth method | Device layer crystal orientation | Device layer dopant type | Device layer doping | Device layer resistivity | Device layer thickness | Handle layer back side treatment | Handle layer crystal orientation | Handle layer dopant type | Handle layer doping | Handle layer layer thickness range | Handle layer resistivity | Handle layer silicon growth method | Handle layer thickness | Handle layer thickness tolerance range |
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Available upon quote | 0.2-4.0μm grown on handle, device or both | ±0.8 μm | N type or P type | CZ, MCZ or FZ | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | ≤0.001 - ≥10,000 Ω-cm | ≥5μm | By lapping, etching or polishing | 100, 111 or 110 | N or P | N type: Phos, Red Phos, Sb＆As P type: Boron | 280-1,150μm | ≤0.001 - ≥10,000 Ω-cm | CZ, MCZ or FZ | 200-1,100μm | ±5μm |
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