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This section provides an overview for high electron mobility transistors (hemt) as well as their applications and principles. Also, please take a look at the list of 3 high electron mobility transistor (hemt) companies and their company rankings. Here are the top-ranked high electron mobility transistor (hemt) companies as of March, 2026: 1.Wolfspeed, 2.STMicroelectronics, 3.Innoscience.
Table of Contents
A HEMT stands for high electron mobility transistor and is a type of field effect transistor (FET) composed of a compound semiconductor consisting of two or more elements.
HEMTs are sometimes called heterojunction FETs because they form a P-N junction by a heterojunction of two compounds with different properties.
Materials used in HEMT include gallium arsenide (GaAs), gallium nitride (GaN), and indium phosphide (InP).
A HEMT is characterized by faster electron transfer and lower noise compared to silicon-based MOSFETs.
HEMTs excel at high-speed processing and have low noise, making them suitable for high-frequency communication applications. These include sanitary communication systems, high-speed digital circuits for optical communications, car navigation systems, automotive radar, and cellular phone base station systems.
In particular, cell phone base station systems are an area where HEMTs are of great importance, as conventional transistors such as silicon-based MOSFETs can no longer handle the high frequencies and wide frequency range of the 5th generation (5G).
In addition, HEMTs have low power consumption and low heat generation, making it possible to omit the installation of air-cooling fans and other equipment, contributing to the miniaturization and weight reduction of base station systems.
HEMTs are a type of field effect transistor (FET).
In a FET, a voltage (gate voltage) is applied to the gate electrode to generate electrolysis in the channel region. This is the pathway for electrons, and the amount of electrons or holes is controlled to regulate the current flowing between the source and drain electrodes (source-drain current).
In a MOSFET, a depletion layer is formed at the interface between the silicon semiconductor and oxide film directly below the gate electrode to which voltage is applied. When a certain large gate voltage is applied, the area near the interface becomes P-N inverted, and current flows through this area as the channel region.
HEMTs, on the other hand, have a thin semiconductor barrier layer on top of a semi-insulating layer, and the gate electrode and barrier layer form a Schottky contact. In the case of the most basic AlGaAs/GaAs HEMTs, GaAs are used for the semi-insulating layer and AlGaAs for the barrier layer.
The AlGaAs layer is very thin, and the AlGaAs interior is completely depleted, so a channel layer cannot be formed here. Instead, free electrons accumulate at the interface between AlGaAs and GaAs, forming a thin channel region consisting of a two-dimensional electron gas on the GaAs side.
When voltage is applied to the gate electrode, the concentration of the two-dimensional electron gas changes due to the electric field effect. If a voltage is applied between the source and drain at this time, current flows.
Since the channel region of HEMTs are high-purity GaAs layer with minimal impurities, electrons can move at high speed without bumping into impurities, resulting in less noise.
*Including some distributors, etc.
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Wolfspeed, based in North Carolina, USA, is a global manufacturer and supplier of Silicon Carbide products, established in 1989. Their extensive portfolio includes Silicon Carbide MOSFETs, Schottky diodes, RF devices, and power modules. The company has 7+ trillion power device field hours and licenses to manufacture from major corporations, including Mitsubishi Chemical, Nexperia BV, Resonac Corporation, Tokuyama Corporation, and Transphorm. As a semiconductor manufacturer, they provide disruptive technology solutions for industries such as electric vehicles, fast charging, 5G, renewable energy, and aerospace. They are ISO 9001:2015, AS 9100D, and IATF 16949: 2016 Certified
Sumitomo Electric Device Innovation, Inc, established in 1897, and based in Yokohama, Japan is a manufacturer and supplier of wireless and optical products. The product portfolio of the company includes a wide range of devices such as electron, optical, coherent, chip carrier, TOSA, ROSA, power amplifiers, and transceivers. The company has certified environmental management systems. The products are used in various applications for environmental solutions and protection with eco-friendly products. The company offers devices with high- speed, accuracy and low power consumption.
ST Micro Electronics is a global semiconductor company serving customers with innovations to have a positive impact on people's lives. Their product line is micro electronic systems, such as switches, controllers, sensors and drivers. The main selling point of ST Micro Electronics is its provision of sustainable products, and introducing their electronics to create a more sustainable world. The company, as well as providing the electronic devices, also provides software and support, ensuring that all fields are covered to provide a fully provide a supported and strong relationship with their customer base. ST Micro Electronics believe that technology plays a key role in helping to solve environmental and social challenges, which is why their semiconductor technologies start with their employees, their customers and partners.
Ranking as of March 2026
Derivation Method| Rank | Company | Click Share |
|---|---|---|
| 1 | Wolfspeed |
35.9%
|
| 2 | STMicroelectronics |
20.5%
|
| 3 | Innoscience |
16.7%
|
| 4 | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
16.7%
|
| 5 | TOSHIBA CORPORATION |
10.3%
|
Derivation Method
The ranking is calculated based on the click share within the high electron mobility transistor (hemt) page as of March 2026. Click share is defined as the total number of clicks for all companies during the period divided by the number of clicks for each company.Number of Employees
Newly Established Company
Company with a History
*Including some distributors, etc.
*Including some distributors, etc.
| Country | Number of Companies | Share (%) |
|---|---|---|
|
United States of America
|
1 | 50.0% |
|
Japan
|
1 | 50.0% |
