High concentration CZ-Si | XCSW compounds / semiconductor crystals CZ method Siliconweha
Tours Co., Ltd.
Price (excluding tax)
Model Description
Using a special doping device, it can be added to high concentrations such as P, SB, AS, and a very low resistance rate can be produced. It is mainly used as an epitaxical growth base.
Model Filter
You can search for other models from each index. The displayed value is the value of the currently selected part number.
BOW
Back
Chipping
Conductive
Direction
LPD
Primary flat length
Primary flat oriented
Resistance value (Ω ・ cm)
Secondary flat direction
Secondary flat length
Surface finishing
TTV
Training method
Warp
diameter
thickness
φ diameter (inch)
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Part Number
High concentration CZ-Si
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Handling Company
Tours Co., Ltd.
XCSW compounds / semiconductor crystals CZ method Siliconweha High concentration CZ-Si's performance table
Items marked with have different values depending on the model number.
| Product Image | Price (excluding tax) | BOW | Back | Chipping | Conductive | Direction | LPD | Primary flat length | Primary flat oriented | Resistance value (Ω ・ cm) | Secondary flat direction | Secondary flat length | Surface finishing | TTV | Training method | Warp | diameter | thickness | φ diameter (inch) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Available upon quote | ≦ 40um | Etched | none | N or p | <100>, <110>, <111> | ≧ 0.3um at ≦ 15pcs | 57.5 ± 2.5mm | <001> ± 1 ° | > 0.001 ~ 1 | none | none | Chemical mechanical polishing | ≦ 5 um | High concentration CZ | ≦ 40um | 76.2 ~ 200mm | 160 or more | 3 ~ 8 |
There are 3 models for this product.
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About Company Handling This Product
- Japan
- Since 2016
- 2 employees