Price (excluding tax)
It is a wafer that can be used for both high concentration/low concentration dope. SI suitable for IC, diode, solar battery, etc.
You can search for other models from each index. The displayed value is the value of the currently selected part number.
BOW
Back
Chipping
Conductive
Direction
LPD
Primary flat length
Primary flat oriented
Resistance value (Ω ・ cm)
Secondary flat direction
Secondary flat length
Surface finishing
TTV
Training method
Warp
diameter
thickness
φ diameter (inch)
Part Number
CZ-SiHandling Company
Tours Co., Ltd.Items marked with have different values depending on the model number.
Product Image | Price (excluding tax) | BOW | Back | Chipping | Conductive | Direction | LPD | Primary flat length | Primary flat oriented | Resistance value (Ω ・ cm) | Secondary flat direction | Secondary flat length | Surface finishing | TTV | Training method | Warp | diameter | thickness | φ diameter (inch) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Available upon quote | ≦ 40um | Etched | none | N or p | <100>, <110>, <111> | ≧ 0.3um at ≦ 15pcs | 57.5 ± 2.5mm | <001> ± 1 ° | > 1 ~ 300 | none | none | Chemical mechanical polishing | ≦ 5 um | Cz | ≦ 40um | 76.2 ~ 200mm | 160 or more | 3 ~ 8 |