SiC MOSFET
SANSHA ELECTRIC MANUFACTURING CO., LTD.
About This Product
■Features
This device overcomes high-speed switching, which is the weakness of IGBTs. SiC (silicon carbide) has a dielectric breakdown strength 10 times that of Si, so even with the same breakdown voltage, the N-drift layer is thinner and lower on-resistance is possible. Characterized by performance that combines high breakdown voltage and low on-resistance, high-speed switching is possible due to unipolar operation.
■Applications
Used for various inverters, induction heating, high frequency plasma power supplies, motor control, etc.
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Product
SiC MOSFET
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Handling Company
SANSHA ELECTRIC MANUFACTURING CO., LTD.
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Categories
2 Models of SiC MOSFET
Items marked with have different values depending on the model number.
Click on the part number for more information about each product
| Product Image | Part Number | Price (excluding tax) | Current (/chip) A | Current (/total) A | Voltage V |
|---|---|---|---|---|---|
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FCA100AC120 |
Available upon quote | 100 | 100 | 1,200 |
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FCA150AC120 |
Available upon quote | 150 | 150 | 1,200 |
Click on the part number for more information about each product
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