About This Product
■Features
In order to make MOSFETs with high breakdown voltage, it is necessary to thicken the drift layer, which has the disadvantage of increasing on-resistance. IGBTs overcome the weaknesses associated with higher breakdown voltages of MOSFETs by injecting holes from the P layer on the back side into the N-layer, using conductivity modulation that lowers the resistance value. Although it is slower than MOSFET, it is a device that achieves high voltage resistance and high-speed switching.
■Applications
It is used in high voltage areas such as various inverters, commercial air conditioners, and welding machines.
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Product
IGBT
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Handling Company
SANSHA ELECTRIC MANUFACTURING CO., LTD.
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Categories
2 Models of IGBT
Items marked with have different values depending on the model number.
Click on the part number for more information about each product
| Product Image | Part Number | Price (excluding tax) | Current (/chip) A | Current (/total) A | Voltage V |
|---|---|---|---|---|---|
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GSA75AA120 |
Available upon quote | 75 | 75 | 1,200 |
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GSA100AA60 |
Available upon quote | 100 | 100 | 600 |
Click on the part number for more information about each product
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