Power IGBT insulated gate bipolar transistor
Infineon Technologies Japan Co., Ltd.
About This Product
We offer a wide variety of devices ranging from IGBT discretes, press packs, power modules, and stacking solutions in various voltage/current classes. These products address a wide range of applications in the automotive, traction, power transmission, industrial and consumer systems fields. Our solutions are characterized by very low forward and blocking power losses, low drive power requirements, and high efficiency.
The IGBT has a maximum withstand voltage of 6.5kV and can be driven at switching frequencies from 2kHz to 50kHz. With a wide technology portfolio, industrial and power control IGBTs are designed to operate at ultra-low power consumption, with excellent current carrying capacity and high pulse load capacity.
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Product
Power IGBT insulated gate bipolar transistor
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Handling Company
Infineon Technologies Japan Co., Ltd.
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Categories
4 Models of Power IGBT insulated gate bipolar transistor
Items marked with have different values depending on the model number.
Click on the part number for more information about each product
| Product Image | Part Number | Price (excluding tax) |
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IGBT discrete |
Available upon quote |
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IGBT power module |
Available upon quote |
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IGBT bare die |
Available upon quote |
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Automotive compatible IGBT |
Available upon quote |
Click on the part number for more information about each product
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