IGBT7 module
Infineon Technologies Japan Co., Ltd.
About This Product
1200V TRENCHSTOP™ IGBT7: High power density and optimized switching. 950 V/1200V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on the latest micropattern trench technology that significantly reduces power losses and provides high controllability. The chip is specifically optimized for industrial drive applications, resulting in significantly lower static losses, higher power density, and softer switching. Furthermore, the power density can be significantly increased by increasing the maximum permissible operating temperature under overload conditions to 175°C in the power module.
Infineon's Easy 1B and Easy 2B families feature 1200 V TRENCHSTOP™ IGBT7 and emitter-controlled diode 7 technology. The product range includes PIMs (Power Integrated Modules) from 10 A to 100 A and 6-pack configurations. The chip is specifically optimized for industrial drive applications, offering much lower conduction losses, higher power density, and softer switching. TRENCHSTOP™ When replacing IGBT4 with IGBT7, you have three options to get the most out of your IGBT.
■Features
- Expanded power class: IGBT7 allows 30% more current with the same housing and same system cooling
- Smaller frame size: IGBT7 increases output power by 11% even in a smaller housing and simplifies system design
・Heat sink simplification: 40% reduction in heat sink size with the same output power
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Product
IGBT7 module
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Handling Company
Infineon Technologies Japan Co., Ltd.
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