Memory F-RAM (ferroelectric memory)
Infineon Technologies Japan Co., Ltd.
About This Product
■Summary
FRAM (Ferroelectric Random Access Memory or FeRAM) is a standalone non-volatile memory that can instantly load and store critical data even when power is interrupted. This makes it ideal for high-performance programmable logic controllers (PLCs) that require reliable control and throughput, or mission-critical data logging applications such as patient monitoring devices that improve patient vitality.
Designed to be low power and compact, F-RAM provides instant non-volatility and virtually unlimited endurance without sacrificing speed or energy efficiency.
■Main features
・NoDelay™ write: Write data to memory cells at bus speed without soak time
・High durability: exceeds floating gate memory with over 100 trillion write cycles
・Ultra low power consumption: Power consumption is 1/200 of EEPROM and 1/3,000 of NOR flash
・Radiation resistance: Resistant to soft errors caused by radiation that cause bit flipping.
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Product
Memory F-RAM (ferroelectric memory)
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Handling Company
Infineon Technologies Japan Co., Ltd.
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Categories
1 Models of Memory F-RAM (ferroelectric memory)
| Product Image | Part Number | Price (excluding tax) |
|---|---|---|
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EXCELON™F-RAM |
Available upon quote |
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